complementary pair enhancement mode field effect transistor BSS8402DW features z low on-resistance . z low gate threshold voltage. z low input capacitance. z fast switching speed. z low input/output leakage. z complementary pair. sot-363 ordering information t ype no. marking package code BSS8402DW knp sot-363 maximum rating ? total device @ ta=25 unless otherwise specified symbol parameter value units p d power dissipation 200 mw r ja thermal resistance,junction-to-ambient 625 / w t j , tstg junction and storage temperature -55 to +150 maximum ratings n-channel ?q 1 , 2n7002 section @ ta=25 unless otherwise specified symbol parameter value units v dss drain-source voltage 60 v v dgr drain-gate voltage(r gs 1.0m ? ) 60 v v gss gate -source voltage continuous pulsed 20 40 v i d drain current continuous continuous@100 pulsed 115 73 800 ma ht t p : // www.lgesemi .c o m mail:lge@lgesemi.com revision:201 70701 -p1
complementary pair enhancement mode field effect transistor maximum ratings n-channel ?q 2 , bss84 section @ ta=25 unless otherwise specified symbol parameter value units v dss drain-source voltage -50 v v dgr drain-gate voltage(r gs 1.0m ? ) -50 v v gss gate -source voltage continuous 20 v i d drain current continuous -130 ma electrical characteristics @ ta=25 unless otherwise specified q 1 ,2n7002 section parameter symbol test conditions min typ max unit drain-source breakdown voltage v (br)dss v gs =0v,i d =10 a 60 70 - gate threshold voltage v gs(th) v ds =v gs , i d =250 a 1 - 2.5 v gate-body leakage forward reverse i gss v ds =0v, v gs =20v v ds =0v, v gs =-20v - - - - 100 -100 na v ds =60v, v gs =0v - - 1 zero gate voltage drain current i dss v ds =60v,v gs =0v,t j =125 - - 500 a on-state drain current i d(on) v gs =10v, v ds =7.5v 0.5 1.0 - a drain-source on-voltage v ds(on) v gs =10v,i d =500ma v gs =5v,i d =50ma - - 0.6 0.09 3.75 1.5 v forward transconductance g fs v ds =10v,i d =200ma 80 - - ms static drain-source on-resistance r ds(on) v gs =5.0v,i d =50ma v gs =10v,i d =500ma, t j =125 - - 3.2 4.4 7.5 13.5 ? input capacitance c iss - 22 50 output capacitance c oss - 11 25 reverse transfer capacitance c rss v ds =25v,v gs =0v,f=1.0mhz - 2 5 pf turn-on delay time t d(on) - 7 20 ns turn-off delay time t d(off) v dd = 30v, i d = 0.2a, r l = 150 ? , v gs = 10v, r gen = 25? - 11 20 ns ht t p : // www.lgesemi .c o m mail:lge@lgesemi.com revision:201 70701 -p1 BSS8402DW
complementary pair enhancement mode field effect transistor electrical characteristics @ ta=25 unless otherwise specified q 2 ,bss84 section parameter symbol test conditions min typ max unit drain-source breakdown voltage v (br)dss v gs =0v,i d =-250 a -50 - - gate threshold voltage v gs(th) v ds =v gs , i d =-1ma -0.8 - -2 v gate-body leakage forward reverse i gss v ds =0v, v gs =20v v ds =0v, v gs =-20v - - - - 100 -100 na v ds =-50v, v gs =0v,t j =25 - - -15 v ds =-50v, v gs =0v,t j =125 - - -60 zero gate voltage drain current i dss v ds =-25v,v gs =0v,t j =25 - - -100 na forward transconductance g fs v ds =-25v,i d =-0.1a 0.05 - - s static drain-source on-resistance r ds(on) v gs =-5v,i d =-0.1a - - 10 ? on-state drain current i d(on) v gs =10v,v ds =7.5v 0.5 1.0 - a input capacitance c iss - - 45 output capacitance c oss - - 25 reverse transfer capacitance c rss v ds =-25v,v gs =0v,f=1.0mhz - - 12 pf turn-on delay time t d(on) - 10 - ns turn-off delay time t d(off) v dd =-30v, i d =-0.27a, v gs =-10v,r gen = 50? - 18 - ns typical characteristics @ ta=25 unless otherwise specified ht t p : // www.lgesemi .c o m mail:lge@lgesemi.com revision:201 70701 -p1 BSS8402DW
complementary pair enhancement mode field effect transistor ht t p : // www.lgesemi .c o m mail:lge@lgesemi.com revision:201 70701 -p1 BSS8402DW
complementary pair enhancement mode field effect transistor ht t p : // www.lgesemi .c o m mail:lge@lgesemi.com revision:201 70701 -p1 BSS8402DW
complementary pair enhancement mode field effect transistor package outline plastic surface mounted package sot-363 soldering footprint unit : mm package information sot-363 dim min max a 2.00 2.20 b 1.15 1.35 c 0.95 typical d 0.25 typical e 0.25 0.40 g 0.60 0.70 h 0.02 0.10 j 0.10 typical k 2.2 2.4 all dimensions in mm device package shipping BSS8402DW sot-363 3000/tape&reel 0.50 0.40 1.90 0.65 0.65 a b c d e g k j h ht t p : // www.lgesemi .c o m mail:lge@lgesemi.com revision:201 70701 -p1 BSS8402DW
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